Patent attributes
A substrate processing apparatus includes a transfer chamber; an upper gas supply mechanism for supplying a gas into an upper region of the transfer chamber through a first gas supply port; and a lower gas supply mechanism configured to supply the gas into a lower region of the transfer chamber through a second gas supply port. The upper gas supply mechanism includes a first buffer chamber at a back surface of the first gas supply port; a pair of upper ducts at both sides of the first buffer chamber; and a first ventilation unit at lower ends of the pair of upper ducts. The lower gas supply mechanism includes a second buffer chamber at a back surface of the second gas supply port; a lower duct at lower surface of the second buffer chamber; and a second ventilation unit at a lower end of the lower duct.
