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US Patent 10559614 Dual conversion gain circuitry with buried channels

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Is a
Patent
Patent

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10559614
Date of Patent
February 11, 2020
Patent Application Number
15916947
Date Filed
March 9, 2018
Patent Citations
‌
US Patent 10110840 Image sensor pixels with overflow capabilities
Patent Citations Received
‌
US Patent 11343459 Image sensing device and electronic device comprising the same
‌
US Patent 11658201 Dual conversion gain image sensor pixels
0
Patent Primary Examiner
John R. Lee
John R. Lee
Patent abstract

An imaging device may have an array of image sensor pixels each having a photodiode and a floating diffusion node. Each image sensor pixel in the array may also include a dual conversion gain switch and a dual conversion gain capacitor that allows the image sensor pixel to operate in a low conversion gain mode during which the switch is turned on to share charge between the floating diffusion node and the dual conversion gain capacitor, and a high conversion gain mode in which the switch is turned off. During integration, the photodiode may generate more charge than can be held at the floating diffusion node. A buried channel may be provided beneath the dual conversion gain switch to provide a path along which the excess charge can be shared between the floating diffusion node and the dual conversion gain capacitor even when the dual conversion gain switch is off.

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