Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
February 11, 2020
Patent Application Number
16404704
Date Filed
May 6, 2019
Patent Citations Received
Patent Primary Examiner
Patent abstract
A vertical transport field-effect transistor includes a top source/drain region separated from an underlying gate stack by a top spacer including open gaps to reduce capacitance therebetween. Techniques for fabricating the transistor include using a sacrificial spacer that is selectively removed prior to growth of the top source/drain region. The top source/drain region may be confined by opposing dielectric layers.
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