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US Patent 10559939 Facet on a gallium and nitrogen containing laser diode

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Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

Patent Inventor Names

Sang-Ho Oh0

James W. Raring0

Phillip Skahan0

Qiyuan Wei0

Alexander Sztein0

Ben Yonkee0

Hua Huang0

Date of Patent

February 11, 2020

Patent Application Number

15937740

Date Filed

March 27, 2018

Patent Citations Received

US Patent 11862939 Ultraviolet laser diode device

0

US Patent 10928587 Integrated optical device with manufactured waveguide aperture to block stray light and associated manufacture method

0

US Patent 11005005 Optoelectronic semiconductor device and method of manufacturing an optoelectronic semiconductor device

0

Patent Primary Examiner

Patent abstract

Laser diode technology incorporating etched facet mirror formation and optical coating techniques for reflectivity modification to enable ultra-high catastrophic optical mirror damage thresholds for high power laser diodes.

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