US Patent 10564352 Photonic integrated circuit bonded with interposer

Aspects described herein include a method comprising forming an insulator layer above a silicon layer of a silicon-on-insulator (SOI) substrate. A first optical device is formed partly in the silicon layer and partly in the insulator layer. A first optical waveguide is formed in the insulator layer and optically coupled with the first optical device. The method further comprises forming conductive contacts extending partly through the insulator layer to the first optical device, bonding a first surface of an interposer with a top surface of the insulator layer, and forming, from a second surface of the interposer opposite the first surface, a plurality of first conductive vias extending at least partly through the interposer. The plurality of first conductive vias are coupled with the conductive contacts.