Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Takeshi Oyama0
Noriaki Fukiage0
Date of Patent
February 25, 2020
0Patent Application Number
149778610
Date Filed
December 22, 2015
0Patent Citations Received
Patent Primary Examiner
Patent abstract
Disclosed is a method of forming a nitride film on a substrate to be processed (“processing target substrate”) having a carbon-containing film that contains a carbon atom. The method includes placing the processing target substrate within a processing container of a film forming apparatus, and forming a first nitride film on the carbon-containing film by plasma of a first reaction gas including a gas of nitride species having no hydrogen atom, and an inert gas.
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