US Patent 10573805 Magnetic memory device

According to one embodiment, a magnetic memory device includes a conductive underlayer having an amorphous structure and containing at least one first predetermined element selected from molybdenum (Mo), magnesium (Mg), rhenium (Re), tungsten (W), vanadium (V), and manganese (Mn), and a stacked structure provided on the underlayer, and including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer.