US Patent 10586851 Silicon carbide semiconductor device and method of manufacturing
Patent 10586851 was granted and assigned to Infineon Technologies on March, 2020 by the United States Patent and Trademark Office.
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Patent abstract
A semiconductor device includes a trench structure extending from a first surface into a silicon carbide semiconductor body. The trench structure includes an auxiliary electrode at a bottom of the trench structure and a gate electrode arranged between the auxiliary electrode and the first surface. A shielding region adjoins the auxiliary electrode at the bottom of the trench structure and forms a first pn junction with a drift structure. A corresponding method of manufacturing the semiconductor device is also described.
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Patent Inventor Names
Andreas Meiser0
Anton Mauder0
Caspar Leendertz0
Roland Rupp0
Edits on 3 Apr, 2023
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Infobox
Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
105868510
Date of Patent
March 10, 2020
0Patent Application Number
159345180
Date Filed
March 23, 2018
0Patent Citations Received
Patent Primary Examiner
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Patent Citations Received
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Patent citations received
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US Patent 10586851 Silicon carbide semiconductor device and method of manufacturing
Infobox
Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
10586851
Date of patent
March 10, 2020
Patent application number
15934518
Date Filed
March 23, 2018
Patent primary examiner
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