Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
March 17, 2020
Patent Application Number
15474724
Date Filed
March 30, 2017
Patent Primary Examiner
Patent abstract
A deep trench capacitor having a high capacity is formed into a deep trench having faceted sidewall surfaces. The deep trench is located in a bulk silicon substrate that contains an upper region of undoped silicon and a lower region of n-doped silicon. The lower region of the bulk silicon substrate includes alternating regions of n-doped silicon that have a first boron concentration (i.e., boron deficient regions), and regions of n-doped silicon that have a second boron concentration which is greater than the first boron concentration (i.e., boron rich regions).
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