US Patent 10593801 Semiconductor devices and methods of fabricating the same

Semiconductor devices and methods of fabricating the same are provided. The methods of fabricating the semiconductor devices may include providing a substrate including an active pattern protruding from the substrate, forming a first liner layer and a field isolating pattern on the substrate to cover a lower portion of the active pattern, forming a second liner layer on an upper portion of the active pattern and the field isolation pattern, and forming a dummy gate on the second liner layer.