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US Patent 10600637 Formation of SiOC thin films

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
May 5, 2017
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Date of Patent
March 24, 2020
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Patent Application Number
15588026
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Patent Citations Received
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US Patent 11776807 Plasma enhanced deposition processes for controlled formation of oxygen containing thin films
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US Patent 11295980 Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
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US Patent 11296189 Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
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US Patent 11501965 Plasma enhanced deposition processes for controlled formation of metal oxide thin films
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US Patent 11562900 Formation of SiOC thin films
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US Patent 11242598 Structures including metal carbide material, devices including the structures, and methods of forming same
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US Patent 11244825 Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
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US Patent 10991573 Uniform deposition of SiOC on dielectric and metal surfaces
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US Patent 11001925 Substrate processing apparatus
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US Patent 11004977 Method for depositing a group IV semiconductor and related semiconductor device structures
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
10600637
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Patent Primary Examiner
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Bret P Chen
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