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US Patent 10622482 Gate cut using selective deposition to prevent oxide loss
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Edits on 5 Jun, 2024
"update inverses"
Golden AI
edited on 5 Jun, 2024
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Patent Citations Received
US Patent 12002718 Fin field-effect transistor device and method
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Edits on 26 May, 2023
"Remove website redirecting to Patent Public Search front page"
Golden AI
edited on 26 May, 2023
Edits made to:
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-1
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=10622482
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Edits on 22 Apr, 2023
"update citations for inverse infoboxes"
Golden AI
edited on 22 Apr, 2023
Infobox
Patent Citations Received
US Patent 10872826 Fin field-effect transistor device and method
0
Edits on 4 Apr, 2023
"update citations for inverse infoboxes"
Golden AI
edited on 4 Apr, 2023
Infobox
Patent Citations
US Patent 10038079 Semiconductor device and manufacturing method thereof
0
Edits on 1 Apr, 2023
"update citations for inverse infoboxes"
Golden AI
edited on 1 Apr, 2023
Infobox
Patent Citations
US Patent 10084053 Gate cuts after metal gate formation
0
Edits on 24 Mar, 2023
"update citations for inverse infoboxes"
Golden AI
edited on 24 Mar, 2023
Infobox
Patent Citations
US Patent 10263090 Semiconductor device and manufacturing method thereof
0
Edits on 14 Dec, 2022
"update inverses"
Golden AI
edited on 14 Dec, 2022
Edits made to:
Infobox
(
+1
properties)
Infobox
Patent Citations Received
US Patent 11527447 Fin field-effect transistor device and method
0
Edits on 28 Sep, 2022
"update citations for inverse infoboxes"
Golden AI
edited on 28 Sep, 2022
Infobox
Patent Citations
US Patent 10084053 Gate cuts after metal gate formation
0
Edits on 25 Sep, 2022
"Entity importer update"
Golden AI
edited on 25 Sep, 2022
Infobox
Is a
Patent
0
Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
10622482
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Date of Patent
April 14, 2020
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Patent Application Number
16402343
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Date Filed
May 3, 2019
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=10622482
0
Patent Citations
US Patent 10038079 Semiconductor device and manufacturing method thereof
0
US Patent 10084053 Gate cuts after metal gate formation
0
US Patent 10263090 Semiconductor device and manufacturing method thereof
0
Patent Citations Received
US Patent 10872826 Fin field-effect transistor device and method
0
Patent Primary Examiner
Eduardo A Rodela
0
Edits on 8 Jun, 2022
"Entity importer update"
Golden AI
edited on 8 Jun, 2022
Edits made to:
Infobox
(
+1
properties)
Infobox
Website URL
https://pdfpiw.uspto.gov/.piw?Docid=10622482
Edits on 8 Feb, 2022
"update inverses"
Golden AI
edited on 8 Feb, 2022
Edits made to:
Infobox
(
+1
properties)
Infobox
Patent citations received
US Patent 10872826 Fin field-effect transistor device and method
Edits on 2 Feb, 2022
"Created via: Entity Importer"
Golden AI
created this topic on 2 Feb, 2022
Edits made to:
Infobox
(
+10
properties)
US Patent 10622482 Gate cut using selective deposition to prevent oxide loss
Infobox
Is a
Patent
Patent jurisdiction
United States Patent and Trademark Office
Patent number
10622482
Date of patent
April 14, 2020
Patent application number
16402343
Date Filed
May 3, 2019
Patent citations
US Patent 10038079 Semiconductor device and manufacturing method thereof
US Patent 10084053 Gate cuts after metal gate formation
US Patent 10263090 Semiconductor device and manufacturing method thereof
Patent primary examiner
Eduardo A Rodela
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