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US Patent 10629492 Gate structure having a dielectric gate and methods thereof
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Edits on 23 May, 2023
"Remove website redirecting to Patent Public Search front page"
Golden AI
edited on 23 May, 2023
Edits made to:
Infobox
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-1
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Infobox
Official Website
https://pdfpiw.uspto.gov/.piw?Docid=10629492
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Edits on 3 Apr, 2023
"update citations for inverse infoboxes"
Golden AI
edited on 3 Apr, 2023
Infobox
Patent Citations
US Patent 10176995 Methods, apparatus and system for gate cut process using a stress material in a finFET device
0
Edits on 28 Sep, 2022
"update citations for inverse infoboxes"
Golden AI
edited on 28 Sep, 2022
Infobox
Patent Citations
US Patent 10176995 Methods, apparatus and system for gate cut process using a stress material in a finFET device
0
Edits on 25 Sep, 2022
"Entity importer update"
Golden AI
edited on 25 Sep, 2022
Infobox
Is a
Patent
0
Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
10629492
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Date of Patent
April 21, 2020
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Patent Application Number
15964177
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Date Filed
April 27, 2018
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=10629492
0
Patent Citations
US Patent 10083874 Gate cut method
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US Patent 10176995 Methods, apparatus and system for gate cut process using a stress material in a finFET device
0
Patent Primary Examiner
Mohammad M Hoque
0
Edits on 8 Jun, 2022
"Entity importer update"
Golden AI
edited on 8 Jun, 2022
Edits made to:
Infobox
(
+1
properties)
Infobox
Website URL
https://pdfpiw.uspto.gov/.piw?Docid=10629492
Edits on 2 Feb, 2022
"Created via: Entity Importer"
Golden AI
created this topic on 2 Feb, 2022
Edits made to:
Infobox
(
+9
properties)
US Patent 10629492 Gate structure having a dielectric gate and methods thereof
Infobox
Is a
Patent
Patent jurisdiction
United States Patent and Trademark Office
Patent number
10629492
Date of patent
April 21, 2020
Patent application number
15964177
Date Filed
April 27, 2018
Patent citations
US Patent 10083874 Gate cut method
US Patent 10176995 Methods, apparatus and system for gate cut process using a stress material in a finFET device
Patent primary examiner
Mohammad M Hoque
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