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US Patent 10741558 Nanosheet CMOS device and method of forming

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Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Date of Patent

August 11, 2020

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Patent Application Number

163576820

Date Filed

March 19, 2019

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Patent Citations Received

US Patent 11942374 Nanosheet field effect transistor with a source drain epitaxy replacement

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US Patent 11705504 Stacked nanosheet transistor with defect free channel

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US Patent 11715762 Transistor gate structures and methods of forming the same

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