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US Patent 10825933 Gate-all-around structure and manufacturing method for the same

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Patent Citations Received
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US Patent 12021153 Semiconductor structure
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=1082593300
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 US Patent 10825933 Gate-all-around structure and manufacturing method for the same

Infobox
Is a
Patent
Patent
Patent applicant
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
10825933
Date of patent
November 3, 2020
Patent application number
16005631
Date Filed
June 11, 2018
Patent citations
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US Patent 10236217 Stacked field-effect transistors (FETs) with shared and non-shared gates
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US Patent 10332970 Method for manufacturing horizontal-gate-all-around devices with different number of nanowires
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US Patent 10475935 Nanometer semiconductor devices having high-quality epitaxial layer
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US Patent 10535738 Semiconductor structure and manufacturing method of the same
Patent primary examiner
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Victor A Mandala

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