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US Patent 10867860 Methods of forming FinFET device
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Patent
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Current Assignee
Taiwan Semiconductor Manufacturing Company
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Date Filed
August 30, 2018
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Date of Patent
December 15, 2020
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Patent Applicant
Taiwan Semiconductor Manufacturing Company
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Patent Application Number
16118087
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Patent Citations
US Patent 10026736 Semiconductor devices and methods of manufacturing the same
US Patent 10153212 Semiconductor device including contact structure
Patent Citations Received
US Patent 11271096 Method for forming fin field effect transistor device structure
Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
10867860
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Patent Primary Examiner
Shouxiang Hu
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