US Patent 10879180 FinFET with etch-selective spacer and self-aligned contact capping layer
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Patent Number
108791800
Date of Patent
December 29, 2020
0Patent Application Number
158238990
Date Filed
November 28, 2017
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US Patent 10879180 FinFET with etch-selective spacer and self-aligned contact capping layer
Infobox
Is a
Patent jurisdiction
Patent number
10879180
Date of patent
December 29, 2020
Patent application number
15823899
Date Filed
November 28, 2017
Patent primary examiner
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