Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kelvin Chan0
Abhijit Basu Mallick0
Ziqing Duan0
Yihong Chen0
Date of Patent
January 5, 2021
0Patent Application Number
168487540
Date Filed
April 14, 2020
0Patent Citations Received
Patent Primary Examiner
Patent abstract
Methods of wordline separation in semiconductor devices (e.g., 3D-NAND) are described. A metal film is deposited in the wordlines and on the surface of a stack of spaced oxide layers. The metal film is removed by high temperature oxidation and etching of the oxide or low temperature atomic layer etching by oxidizing the surface and etching the oxide in a monolayer fashion. After removal of the metal overburden, the wordlines are filled with the metal film.
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