Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Sunglyong Kim0
David LaFonteese0
Sameer Pendharkar0
Seetharaman Sridhar0
Date of Patent
January 19, 2021
0Patent Application Number
166770440
Date Filed
November 7, 2019
0Patent Citations
Patent Primary Examiner
Patent abstract
An electrostatic discharge (ESD) protection structure that provides snapback protections to one or more high voltage circuit components. The ESD protection structure can be integrated along a peripheral region of a high voltage circuit, such as a high side gate driver of a driver circuit. The ESD protection structure includes a bipolar transistor structure interfacing with a PN junction of a high voltage device, which is configured to discharge the ESD current during an ESD event. The bipolar transistor structure has a collector region overlapping the PN junction, a base region embedded with sufficient pinch resistance to launch the snapback protection, and an emitter region for discharging the ESD current.
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