Patent attributes
A memory may include: a bit line sense amplifier circuit configured to operate based on voltages supplied to a pull-up voltage terminal and a pull-down voltage terminal, provide an offset between a first bit line and a second bit line during an offset canceling period, and amplify a voltage difference between the first bit line and the second bit line during an amplification period; a first down-converter configured to generate a second pull-up voltage by down-converting a first pull-up voltage and supply the generated second pull-up voltage to a first node; a capacitor electrically connected to the first node; a charging component configured to charge the capacitor with the first pull-up voltage before the offset canceling period; and a first pull-up supply configured to supply a voltage of the first node to the pull-up voltage terminal during the offset canceling period.
