Patent attributes
A three-dimensional AND type flash memory and a manufacturing method thereof includes steps below is provided. A stack structure includes a first insulating layer and a first sacrificial layer is formed. A first pillar structure through the stack structure includes a second insulating layer and a second sacrificial layer surrounded by thereof is formed. A second pillar structure through the stack structure includes a channel layer and an insulating pillar surrounded by thereof is formed. The second sacrificial layer is located on both sides of the channel layer. The first sacrificial layer is removed. A lateral opening exposing a portion of the second insulating layer and the channel layer is formed. A gate insulating layer surrounding the exposed second insulating layer and channel layer is formed in the lateral opening. A gate layer is filled in the lateral opening. A conductive layer is used to replace the second sacrificial layer.
