US Patent 10916317 Programmable resistance memory on thin film transistor technology

Programmable resistive memory can be fabricated with a non-single-crystalline silicon formed on a flexible substrate. The non-single-crystalline silicon can be amorphous silicon, low-temperature polysilicon (LTPS), organic semiconductor, or metal oxide semiconductor. The flexible substrate can be glass, plastics, paper, metal, paper, or any kinds of flexible film. The programmable resistive memory can be PCRAM, RRAM, MRAM, or OTP. The OTP element can be a silicon, polysilicon, organic or metal oxide electrode. The selector in a programmable resistive memory can be a MOS or diode with top gate, bottom gate, inverted, staggered, or coplanar structures.