US Patent 10923474 Semiconductor structure having gate-all-around devices

An integrated circuit includes gate-all-around (GAA) nanowire transistors and GAA nanosheet transistors on the same substrate. An array of cells including GAA nanowire transistors and cells including nanosheet transistors are provided. The cells including GAA nanowire transistors can be adjacent cells including GAA nanosheet transistors with isolation structures interposing the cells.