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US Patent 10930563 Formation of stacked nanosheet semiconductor devices
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Patent
Date Filed
January 7, 2020
Date of Patent
February 23, 2021
Patent Application Number
16735826
Patent Citations
US Patent 10388569 Formation of stacked nanosheet semiconductor devices
US Patent 10236217 Stacked field-effect transistors (FETs) with shared and non-shared gates
US Patent 10483166 Vertically stacked transistors
US Patent 10096607 Three-dimensional stacked junctionless channels for dense SRAM
US Patent 10192867 Complementary FETs with wrap around contacts and method of forming same
Patent Citations Received
US Patent 11837604 Forming stacked nanosheet semiconductor devices with optimal crystalline orientations around devices
9
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
10930563
Patent Primary Examiner
Allan R. Wilson
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