Patent 10937872 was granted and assigned to Vanguard International Semiconductor Corporation on March, 2021 by the United States Patent and Trademark Office.
A semiconductor structure is provided. The semiconductor structure includes a substrate, a gate disposed on the substrate, a source disposed in the substrate and located on one side of the gate, a drain disposed in the substrate and located on another side of the gate, and a gate extending portion disposed on the substrate and located between the gate and the drain. The doping type of the gate is the opposite of that of the gate extending portion.