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US Patent 10950498 Selective and self-limiting tungsten etch process

Patent 10950498 was granted and assigned to Applied Materials on March, 2021 by the United States Patent and Trademark Office.

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Patent abstract

Methods of dep-etch in semiconductor devices (e.g. V-NAND) are described. A metal layer is deposited in a feature. The metal layer is removed by low temperature atomic layer etching by oxidizing the surface of the metal layer and etching the oxide in a layer-by-layer fashion. After removal of the metal layer, the features are filled with a metal.

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