Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Effendi Leobandung0
Date of Patent
March 23, 2021
0Patent Application Number
165145020
Date Filed
July 17, 2019
0Patent Citations
Patent Primary Examiner
Patent abstract
Methods for forming a tight pitch stack nanowire without shallow trench isolation including a base nanosheet formed on a substrate. At least one fin are formed, and at least one dummy gate is formed over the at least two fins, on the base nanosheet, the at least two fins including at least two alternating layers of a first material and a second material. The base nanoset is replaced with a blanket dielectric to form a shallow trench isolation (STI) around the at least one fin and around the at least one dummy gate. A gate replacement is performed to replace the at least one dummy gate and the second material with a gate conductor material and a gate cap to form gate structure.
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