US Patent 10963776 Artificial neuron based on ferroelectric circuit element

Patent

US Patent 11501813 Method of forming stacked ferroelectric non- planar capacitors in a memory bit-cell

US Patent 11514966 Non-linear polar material based multi-memory element bit-cell with multi-level storage

US Patent 11514967 Non-linear polar material based differential multi-memory element gain bit-cell

US Patent 11521666 High-density low voltage multi-element ferroelectric gain memory bit-cell with planar capacitors

US Patent 11521668 Pulsing scheme for a ferroelectric memory bit-cell with plate-line parallel to word-line to minimize read or write disturb effects

US Patent 11521667 Stacked ferroelectric planar capacitors in a memory bit-cell

US Patent 11527277 High-density low voltage ferroelectric memory bit-cell

US Patent 11527278 Non-linear polar material based memory bit-cell with multi-level storage by applying different time pulse widths

US Patent 11532342 Non-linear polar material based differential multi-memory element bit-cell

US Patent 11532344 Reading scheme for 1TNC ferroelectric memory bit-cell with plate-line parallel to bit-line and with individual switches on plate-lines of the bit-cell

United States Patent and Trademark Office

David Lam