Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hsiang-Lan Lung0
Huai-Yu Cheng0
I-Ting Kuo0
Date of Patent
April 13, 2021
Patent Application Number
16601647
Date Filed
October 15, 2019
Patent Citations
Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device includes a first electrode, a second electrode, and an In-doped chalcogenide-based selector layer disposed between the first electrode and the second electrode, in which the In-doped chalcogenide-based selector layer has an In compound content of about 2 at. % to about 10 at. %. A memory cell including the In-doped chalcogenide-based selector layer is also provided.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
