Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chun-Ya Chiu0
Chin-Hung Chen0
Yu-Hsiang Lin0
Ssu-I Fu0
Chi-Ting Wu0
Chih-Kai Hsu0
Date of Patent
April 20, 2021
0Patent Application Number
167323670
Date Filed
January 2, 2020
0Patent Primary Examiner
Patent abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate having a fin-shaped structure thereon; forming a single diffusion break (SDB) structure in the substrate to divide the fin-shaped structure into a first portion and a second portion; forming a first gate structure on the SDB structure; forming an interlayer dielectric (ILD) layer on the first gate structure; removing the first gate structure to form a first recess; and forming a dielectric layer in the first recess.
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