Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chung-Lin Huang0
Date of Patent
April 20, 2021
0Patent Application Number
167208460
Date Filed
December 19, 2019
0Patent Citations Received
Patent Primary Examiner
Patent abstract
The present disclosure provides a semiconductor capacitor structure. The semiconductor capacitor structure includes a substrate, a comb-like bottom electrode disposed over the substrate, a top electrode disposed over the comb-like bottom electrode, and a dielectric layer sandwiched between the top electrode and the comb-like bottom electrode. The comb-like bottom electrode includes a plurality of tooth portions parallel to the substrate and a supporting portion coupled to the plurality of tooth portions and perpendicular to the substrate.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.