Patent attributes
An active matrix substrate includes: a substrate (1); a peripheral circuit including a plurality of first TFTs (10); and a plurality of second TFTs (20), wherein each of the first and second TFTs (10, 20) includes: a gate electrode (3A, 3B); a gate insulating layer (5); an oxide semiconductor layer (7A, 7B) including a channel region (7Ac, 7Bc), a source contact region (7As, 7Bs) and a drain contact region (7Ad, 7Bd), wherein the source contact region and the drain contact region are located on opposite sides of the channel region; a source electrode (8A, 8B) that is in contact with the source contact region and a drain electrode (9A, 9B) that is in contact with the drain contact region; the oxide semiconductor layer of the first TFTs and the second TFTs is formed from the same oxide semiconductor film; a carrier concentration in the channel regions (7Ac) of the first TETs is higher than a carrier concentration in the channel regions (7Bc) of the second TETs.
