US Patent 10991757 Magnetoresistive random access memory
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A semiconductor device includes: a substrate having a magnetic tunneling junction (MTJ) region and a logic region; a magnetic tunneling junction (MTJ) on the MTJ region, wherein a top view of the MTJ comprises a circle; and a first metal interconnection on the MTJ. Preferably, a top view of the first metal interconnection comprises a flat oval overlapping the circle.
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Patent Number
109917570
Date of Patent
April 27, 2021
0Patent Application Number
164304370
Date Filed
June 4, 2019
0Official Website
Patent Citations
Patent Primary Examiner
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Patent Jurisdiction
Patent Number
109917570
Date of Patent
April 27, 2021
0Patent Application Number
164304370
Date Filed
June 4, 2019
0Official Website
Patent Citations
Patent Primary Examiner
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US Patent 10991757 Magnetoresistive random access memory
Infobox
Is a
Patent jurisdiction
Patent number
10991757
Date of patent
April 27, 2021
Patent application number
16430437
Date Filed
June 4, 2019
Patent citations
Patent primary examiner
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