Patent attributes
A method of forming a high energy density capacitor comprises depositing a first metal layer on a substrate, depositing a first layer of polarizable dielectric material comprised of a high K dielectric material on said first metal layer, and applying a momentary high voltage electric field of positive or negative polarity above said first layer of polarizable dielectric material forming an electret. The method further comprises depositing a second metal layer on said first layer of polarizable dielectric material, depositing a second layer of polarizable dielectric material comprised of a high K dielectric material onto said second metal layer, and applying a second momentary high voltage electric field of opposing polarity above said second layer of polarizable dielectric material to align dipoles of the second layer into one or more electrets that will oppose a main electric field created as the capacitor is charging. The first and second metal layers are shorted to ground prior to applying said first and second momentary high voltage electric fields.