Patent 11006526 was granted and assigned to Toshiba Memory Corporation on May, 2021 by the United States Patent and Trademark Office.
According to one embodiment, a semiconductor storage device includes a board, a semiconductor memory component, and a capacitor. The hoard includes a first pad and a second pad. The first capacitor includes a first electrode and a second electrode. The first pad includes a first region and a second region. A direction from the first pad to the second pad is a first direction and a direction different from the first direction is a second direction. A difference between a dimension of the second region in the second direction and a dimension of the first electrode in the second direction is smaller than a difference between a dimension of the first region in the second direction and a dimension of the first electrode in the second direction.