Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
May 18, 2021
Patent Application Number
16427181
Date Filed
May 30, 2019
Patent Citations
Patent Primary Examiner
Patent abstract
A method for manufacturing a semiconductor device includes forming a semiconductor fin over a substrate. A fin spacer is formed on a sidewall of the semiconductor fin. An e-beam treatment is performed on the fin spacer. An epitaxial structure is formed over the semiconductor fin. The epitaxial structure is in contact with the e-beam treated fin spacer.
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