US Patent 11011697 Faceted sidewall magnetic tunnel junction structure
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A magnetic tunnel junction (MTJ) structure having faceted sidewalls is formed on a conductive landing pad that is present on a surface of an electrically conductive structure embedded in a dielectric material layer. No metal ions are re-sputtered onto the sidewalls of the MTJ structure during the patterning of the MTJ material stack that provides the MTJ structure. The absence of re-sputtered metal on the MTJ structure sidewalls reduces the risk of shorts.
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Patent Jurisdiction
Patent Number
110116970
Date of Patent
May 18, 2021
0Patent Application Number
167465580
Date Filed
January 17, 2020
0Official Website
Patent Citations
Patent Primary Examiner
Edits on 22 Sep, 2022
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Infobox
Is a
Patent Jurisdiction
Patent Number
110116970
Date of Patent
May 18, 2021
0Patent Application Number
167465580
Date Filed
January 17, 2020
0Official Website
Patent Citations
Patent Primary Examiner
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US Patent 11011697 Faceted sidewall magnetic tunnel junction structure
Infobox
Is a
Patent jurisdiction
Patent number
11011697
Date of patent
May 18, 2021
Patent application number
16746558
Date Filed
January 17, 2020
Patent citations
Patent primary examiner
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