US Patent 11024358 Differential compute-in-memory bitcell

A compute-in-memory bitcell is provided that includes a pair of cross-coupled inverter for storing a stored bit. The compute-in-memory bitcell includes a logic gate for multiplying the stored bit with an input vector bit. An output node for the logic gate connects to a second plate of a positive capacitor. A first plate of the positive capacitor connects to a positive read bit line. An inverter inverts a voltage of the second plate of the positive capacitor to drive a first plate of a negative capacitor having a second plate connected to a negative read bit line.