US Patent 11024791 Magnetically stabilized magnetic Josephson junction memory cell

A memory cell is provided that comprises a first superconductor electrode, a second superconductor electrode, and a magnetic Josephson junction (MJJ) stack disposed between the first superconductor electrode and the second superconductor electrode. The MJJ stack includes a magnetic reference layer and a magnetic storage layer. The memory cell further comprises a magnetically stabilizing structure disposed between the MJJ stack and the second superconductor electrode, wherein the magnetic stabilizing structure magnetically couples with the magnetic reference layer to strengthen the fixed state of the magnetic reference layer.