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US Patent 11031527 Reflective layers for light-emitting diodes

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Patent abstractTimelineTable: Further ResourcesReferences
Is a
Patent
Patent

Patent attributes

Patent Applicant
Wolfspeed
Wolfspeed
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11031527
Date of Patent
June 8, 2021
Patent Application Number
15882103
Date Filed
January 29, 2018
Patent Citations
‌
US Patent 10236414 Semiconductor light emitting device and method of manufacturing the same
Patent Citations Received
‌
US Patent 11894488 LED chips with irregular microtextured light extraction surfaces, and fabrication methods
4
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US Patent 11430658 Bonding methods for light emitting diodes
‌
US Patent 11854810 Bonding methods for light emitting diodes
6
‌
US Patent 11569091 Hybrid-bonded and run-out compensated light emitting diodes
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US Patent 11631587 Bonding methods for light emitting diodes
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US Patent 11355666 Bonding methods for light emitting diodes
‌
US Patent 11387389 Reflective layers for light-emitting diodes
Patent Primary Examiner
‌
Hoang-Quan Ho
Patent abstract

A light-emitting diode (LED) chip with reflective layers having high reflectivity. The LED chip may include an active LED structure including an active layer between an n-type layer and a p-type layer. A first reflective layer is adjacent the active LED structure and comprises a plurality of dielectric layers with varying optical thicknesses. The plurality of dielectric layers may include a plurality of first dielectric layers and a plurality of second dielectric layers of varying thicknesses and compositions. The LED chip may further include a second reflective layer that includes an electrically conductive path through the first reflective layer.

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