Is a
Patent attributes
Patent Applicant
Patent Jurisdiction
Patent Number
Date of Patent
June 15, 2021
Patent Application Number
16589915
Date Filed
October 1, 2019
Patent Citations Received
Patent Primary Examiner
Patent abstract
A gallium nitride-on-silicon structure is disclosed in which the two-dimensional electron gas (2DEG) layer is a discontinuous layer that includes at least two 2DEG segments. Each 2DEG segment is separated from another 2DEG segment by a gap. The 2DEG layer can be depleted by a p-doped gallium nitride layer that is disposed over a portion of an aluminum gallium nitride layer. Additionally or alternatively, a trench may be formed in the structure through the 2DEG layer to produce a gap in the 2DEG layer. An electrical component is positioned over at least a portion of a gap.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
