Patent attributes
A semiconductor module comprises reverse conducting IGBT connected in parallel with a wide bandgap MOSFET, wherein each of the reverse conducting IGBT and the wide bandgap MOSFET comprises an internal anti-parallel diode. A method for operating a semiconductor module with the method including the steps of: determining a reverse conduction start time, in which the semiconductor module starts to conduct a current in a reverse direction, which reverse direction is a conducting direction of the internal anti-parallel diodes; applying a positive gate signal to the wide bandgap MOSFET after the reverse conduction start time; determining a reverse conduction end time based on the reverse conduction start time, in which the semiconductor module ends to conduct a current in the reverse direction; and applying a reduced gate signal to the wide bandgap MOSFET a blanking time interval before the reverse conduction end time, the reduced gate signal being adapted for switching the wide bandgap MOSFET into a blocking state.
