Patent attributes
A method for forming a semiconductor device is provided. The method includes providing a substrate, placing a first stencil having a first openwork pattern on the substrate, applying a first material onto the substrate through the first stencil, and removing the first stencil from the substrate. The first material includes a transparent material. The method also includes placing a second stencil having a second openwork pattern on the substrate, applying a second material onto the substrate through the second stencil, and removing the second stencil from the substrate. The second material includes a light-shielding material, and the second openwork pattern is different from the first openwork pattern.