Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hyangkeun Yoo0
Date of Patent
July 6, 2021
0Patent Application Number
160166050
Date Filed
June 24, 2018
0Patent Primary Examiner
Patent abstract
A ferroelectric memory device according to an embodiment includes a substrate, a ferroelectric layer and a gate electrode layer that are sequentially stacked on the substrate, and an oxygen vacancy barrier layer disposed at least between the substrate and the ferroelectric layer or between the ferroelectric layer and the gate electrode layer. The oxygen vacancy barrier layer includes a metal oxide with formula unit components that satisfy a stoichiometric ratio.
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