Patent attributes
A substrate structure includes a set of nanosheet layers stacked upon a substrate. The substrate structure includes a p-channel region and an n-channel region. The substrate structure further includes divots within the p-channel region and the n-channel region. A first liner is formed within the divots of the n-channel region. The first liner is formed of a material having a positive charge. A second liner is formed within the divots of the p-channel region. The second liner is formed of a material having a negative charge. A p-type epitaxy is deposited in the p-channel region to form first air gap spacers of the divots in the p-channel region. An n-type epitaxy is deposited in the n-channel region to form second air gap spacers of the divots in the n-channel region.
