Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
July 13, 2021
Patent Application Number
16807108
Date Filed
March 2, 2020
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate having a fin-shaped structure thereon; forming a single diffusion break (SDB) structure in the substrate to divide the fin-shaped structure into a first portion and a second portion; forming a first gate structure on the SDB structure; forming an interlayer dielectric (ILD) layer around the first gate structure; transforming the first gate structure into a first metal gate; removing the first metal gate to form a first recess; and forming a dielectric layer in the first recess.
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