US Patent 11075161 Large via buffer

An interconnect structure is provided. The interconnect structure includes a first metallization layer, an insulating layer and a second metallization layer. The first metallization layer includes, at an uppermost surface thereof, a first body formed of first dielectric material, first metallic elements and buffer elements formed of second dielectric material adjacent the first metallic elements. The insulating layer is disposed on the uppermost surface of the first metallization layer and defines apertures located at the first metallic elements and the corresponding buffer elements. The second metallization layer is disposed on the insulating layer and includes a second body formed of first dielectric material and second metallic elements located at the apertures and extending through the apertures to contact the corresponding first metallic elements and the corresponding buffer elements.