US Patent 11075301 Nanosheet with buried gate contact

A semiconductor structure including a nanosheet stack on a silicon germanium on insulator substrate, the nanosheet stack including alternating layers of a sacrificial semiconductor material and a semiconductor channel material vertically aligned and stacked one on top of another, a gate conductor orthogonal to the nanosheet stack and wrapping around the semiconductor channel material layers of the nanosheet stack, and a gate contact on the gate conductor layer adjacent to the nanosheet stack.