US Patent 11075314 Doped absorption photodiode
Patent 11075314 was granted and assigned to Hewlett Packard Enterprise on July, 2021 by the United States Patent and Trademark Office.
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Patent abstract
An example device includes a doped absorption region to receive optical energy and generate free electrons from the received optical energy. The example device also includes a doped charge region to increase an electric field. The example device also includes an intrinsic multiplication region to generate additional free electrons from impact ionization of the generated free electrons. The example device includes a doped contact region to conduct the free electrons and the additional free electrons.
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Patent Inventor Names
Raymond G. Beausoleil0
Zhihong Huang0
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Patent Number
110753140
Date of Patent
July 27, 2021
0Patent Application Number
168903740
Date Filed
June 2, 2020
0Official Website
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US Patent 11075314 Doped absorption photodiode
Infobox
Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
11075314
Date of patent
July 27, 2021
Patent application number
16890374
Date Filed
June 2, 2020
Patent citations
Patent primary examiner
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