US Patent 11088190 Optical semiconductor device
Patent 11088190 was granted and assigned to Hamamatsu Photonics on August, 2021 by the United States Patent and Trademark Office.
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Patent abstract
An optical semiconductor device includes a semiconductor substrate having a plurality of photoelectric conversion parts and having a trench formed to separate the plurality of photoelectric conversion parts from each other, an insulating layer formed on at least an inner surface of the trench, a boron layer formed on the insulating layer, and a metal layer formed on the boron layer.
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Patent Inventor Names
Hirotaka Takahashi0
Masaharu Muramatsu0
Yasuhito Miyazaki0
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Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
110881900
Date of Patent
August 10, 2021
0Patent Application Number
201804020
Date Filed
April 2, 2018
0Official Website
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US Patent 11088190 Optical semiconductor device
Infobox
Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
11088190
Date of patent
August 10, 2021
Patent application number
20180402
Date Filed
April 2, 2018
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